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Pre-Registration Deadline - 6 July 2011
Proceeding Papers Submission Deadline - 8 July 2011
Onsite Registration - 10-15 July 2011
ICNS-9 10-15 July 2011
Professor Umesh Mishra (University of California Santa Barbara, USA)
Topic: III-Nitrides for High Power, Frequency Electronic Devices
Professor Hiroshi Amano (Nagoya University, Nagoya, Japan)
Topic: High In content InGaN for Solar Cell applications
Dr. James Raring (VP of Laser Engineering, SORAA Inc., USA)
Topic: III-Nitride Lasers
Dr. Martin Strassburg (OSRAM Opto Semiconductors GmbH)
Topic: InGaN/GaN Nanorods - Shaping the Light of the Future
We are delighted to invite you to the 9th International Conference on Nitride Semiconductors (ICNS-9) which will be held at the Scottish Exhibition and Conference Centre (SECC), Glasgow, UK from 10th - 15th July 2011. ICNS-9 is a leading international forum for reporting advances in group III - nitride semiconductors such as gallium nitride and indium nitride. Both fundamental research and applications are fully covered, with sessions focussing on topics such as Epitaxial Growth, Bulk Crystal Growth, Theory and Simulation, Optical and Electronic Devices (LEDs, lasers, transistors, etc), Material Characterization and Development and Nanostructures involving Nitride Semiconductors.
Glasgow has an internationally renowned Conference Centre that is readily accessible and offers a base to the wider social, cultural and historical attractions in Scotland and the United Kingdom. An exhibition of products and information relating to III-nitrides will be co-located with the posters and refreshment/lunch areas in one of the SECCâ€™s spacious exhibition halls, providing excellent opportunities for interaction.
The Conference rotates between the European, North American and Asian continent and has hosted attendees from over 30 countries. The most recent Conference in the series (ICNS-8), held in Jeju, Korea, hosted over 1,000 international scientists and engineers with more than 600 posters and oral presentations. Research and applications involving nitrides remain vibrant and productive and we anticipate another large and successful ICNS Conference, with a large number of academic and industrial attendees.
We are looking forward to a very significant Conference where there is the opportunity to meet and network with a high quality audience in the professional atmosphere of a focused international Conference. ICNS-9 will attract technology leaders by offering a top quality technical programme of the current state-of-the-art papers combined with networking opportunities.
We look forward to welcoming you to Glasgow in July 2011.
Professor Robert Martin
Professor Peter Parbrook