Welcome To 9th International Conference on Nitride Semiconductors

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Scientific Programme

ICNS-9 Programme at a Glance

The ICNS-9 Scientific Programme has been finalised and an overview grid is detailed below:

icns-programme-at-a-glance

To search the ICNS-9 Scientific Programme by Author, Title or by day please click here

ICNS-9 USB Stick click here

Topic Areas

I: Growth and Structure

A. Bulk and Template Growth
B. Epitaxial Growth and Structural Properties
C. Nanostructures and Novel Nitride Alloys
D. InN and related Materials

II: Optical Properties and Optoelectronic Devices

E. Optical and Magnetic Properties
F. Light Emitting Diodes and improving efficiency
G. Lasing and Laser Diodes
H. Theory and Modelling of Materials and Devices

III: Electronic Devices and Detectors

I. Power and High Frequency Devices
J. Device Fabrication and Reliability
K. Sensors and Photodetectors
L. Solar Cells and Energy Harvesting