Plenary Speakers and Titles
Professor Umesh Mishra (University of California Santa Barbara, USA)
Topic: III-Nitrides for High Power, Frequency Electronic Devices

Professor Hiroshi Amano (Nagoya University, Nagoya, Japan)
Topic: High In content InGaN for Solar Cell applications

Dr. James Raring (VP of Laser Engineering, SORAA Inc., USA)
Topic: III-Nitride Lasers

Martin Strassburg, OSRAM Opto Semiconductors GmbH
Title: InGaN/GaN Nanorods - Shaping the Light of the Future

Invited Speakers and Titles

J.W. Ager - thermopower measurements in InN-related materials
Y. Arakawa - Recent Progress in the Physics of Nitride Quantum Dots in nano membranes
Yoon Choi - High-Brightness Non-Polar A-plane GaN Light Emitting Diodes Grown on R-plane Sapphire Substrates
S.J. Chua - In rich quantum dots
J. del Alamo - GaN RF transistors
R. Doradzinski - Ammonothermal growth of GaN
N. Grandjean - Growth and applications of AlInN
F. Julien - Prospects for intersubband lasers in GaN
Dr T. Kachi - GaN power electronics
Y. Kawakami - Optical properties of Al-rich AlGaN quantum wells and their application to electron-beam pumped deep-UV emitters
M. Kuball - GaN HEMTs: Thermal and Electrical Reliability Aspects
S. Novikov - Growth of GaNBi
A. Rosenauer - Composition mapping in InGaN with quantitative STEM and comparison with atom probe measurements
U. Schwarz - Optical gain of green (Al,In)GaN laser diodes
Uwe Strauss – Green InGaN lasers – Rainbow
T. Suski - Universal Behavior of Photoluminescence in Polar and Semipolar InGaN Quantum Wells Revealed by Hydrostatic Pressure Studies
C. van der Walle - Carbon Impurities and Yellow Emission
A. Waag - GaN NanoLEDs and 3D LEDs
P. Waltereit - GaN-based high frequency devices and circuits
W. Walukiewicz - Nitride based solar cells
A. Yoshikawa - Magic Number Digital Alloy Growth and Application to Solar Cells
E. Zanoni - GaN HEMT reliability
G.Y. Zhang - magnetic property of GaMnN growth by MOCVD
H. Zhao - LEDs on Si substrates